ALD简介
原子层沉积技术(Atomic Layer Deposition,简称ALD)是一种在纳米尺度上进行薄膜沉积的先进技术。通过将物质以单原子形式一层一层的镀在基底表面,拥有优异的三维共形性、大面积成膜的均匀性和精确控制膜厚等特点。
ALD应用
ALD在能源领域应用
2009年,Miyaska课题组将钙钛矿材料MAPbI3用作燃料敏化太阳能电池的光伏活性层,正式开启了钙钛矿太阳能电池的新纪元。ALD凭借其均匀成膜性、精准控制厚度和保形性等多种优势,在光伏领域中发挥着重要作用。除此之外,ALD技术还可用于锂电池薄膜涂层,提高电池性能。
ALD在泛半导体应用
随着泛半导体行业的发展,对微型化和集成化要求越来越高,尺寸缩小至亚微米和纳米量级,ALD作为一种高精度薄膜沉积技术,可用于晶体管栅极电介质层(高K材料)、金属栅电极、有机发光显示器涂层、铜互联扩散阻挡层、DRAM电介质层、微流体和MEMS涂层、传感器等众多领域。
ALD在光学领域应用
由于 ALD 具有的三维共形沉积和大面积均匀性特点,已成功应用于高质量光学薄膜、增透膜、折射率可调的光学薄膜、波状多层膜,改善了光子晶体的光学性质和可控性,增加了光子晶体在未来光学器件中的应用潜力。
公司致力于ALD高纯半导体薄膜前驱体材料的自主研发和生产,成立以来,已陆续向多家半导体客户提供了百余种前驱体新材料,包括高纯硅基前驱体系列、High-k前驱体系列产品,部分新品已被客户用于5nm以下制程薄膜设备。我们致力为客户提供优质的产品并建立互信、长久的合作关系,产品具有自主知识产权且原材料国产化,打破国外垄断的同时保证供应链的安全。研峰科技愿与国内芯片、高端显示、光伏新能源等高端客户一起携手,解决高端半导体材料的把脖子难题,早日实现进口替代。
Chemical Name | Tantalum(V) ethoxide |
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CAS Number | 6074-84-6 |
PubChem Substance ID | 160806 |
EC Number | 228-010-2 |
Beilstein Registry Number | 3678999 |
MDL Number | MFCD00049785 |
Synonym | Tantalum(V) Ethoxide (Metals Basis), Nb {LY} Tantalum(V) Ethoxide (Metals Basis), Nb {} {LY} Tantalum(V) Ethoxide (Metals Basis), Nb {} {} {LY} Tantalum(V) Ethoxide (Metals Basis), Nb {} {} {} {LY} Tantalum(V) Ethoxide (Metals Basis), Nb {} {} {} {} {LY} Tantalum(V) Ethoxide (Metals Basis), Nb {} {} {} {} {} {LY} Tantalum(V) Ethoxide (Metals Basis), Nb {} {} {} {} {} {} {LY} Tantalum(V) Ethoxide (Metals Basis), Nb {} {} {} {} {} {} {} {LY} Tantalum(V) Ethoxide (Metals Basis), Nb {} {} {} {} {} {} {} {} {LY} Tantalum(V) Ethoxide (Metals Basis), Nb {} {} {} {} {} {} {} {} {} {LY} Tantalum(V) Ethoxide (Metals Basis), Nb {} {} {} {} {} {} {} {} {} {} {LY} Tantalum(V) Ethoxide (Metals Basis), Nb {} {} {} {} {} {} {} {} {} {} {} {LY} Tantalum(V) Ethoxide (Metals Basis), Nb {} {} {} {} {} {} {} {} {} {} {} {} {LY} Tantalum(V) Ethoxide (Metals Basis), Nb {} {} {} {} {} {} {} {} {} {} {} {} {} {} {} {} {} {} {} {} {} {} {} {} {} {} {LY} Tantalum(V) Ethoxide (Metals Basis), |
Chemical Name Translation | 乙醇钽(V) |
InChIKey | HSXKFDGTKKAEHL-UHFFFAOYSA-N |
InChI | InChI=1S/5C2H5O.Ta/c5*1-2-3;/h5*2H2,1H3;/q5*-1;+5 |
Canonical SMILES | [C2H6O.1/5Ta] |
WGK Germany | 1 |
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Hazard statements | |
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Personal Protective Equipment | Faceshields, full-face respirator (US), Gloves, Goggles, multi-purpose combination respirator cartridge (US), type ABEK (EN14387) respirator filter |
Hazard Codes | C C,F C;F |
Precautionary statements | |
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Signal word | Danger |
UN Number | 2920 UN2924 UN 2920 8/PG 2 |
Risk Statements | |
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Safety Statements | |
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Storage condition | Store at room temperature, keep dry and cool {LY} Store at room temperature, keep dry and cool {} {LY} Store at room temperature, keep dry and cool {} {} {LY} Store at room temperature, keep dry and cool {} {} {} {LY} Store at room temperature, keep dry and cool {} {} {} {} {LY} Store at room temperature, keep dry and cool {} {} {} {} {} {LY} Store at room temperature, keep dry and cool {} {} {} {} {} {} {LY} Store at room temperature, keep dry and cool {} {} {} {} {} {} {} {LY} Store at room temperature, keep dry and cool {} {} {} {} {} {} {} {} {LY} Store at room temperature, keep dry and cool {} {} {} {} {} {} {} {} {} {LY} Store at room temperature, keep dry and cool {} {} {} {} {} {} {} {} {} {} {LY} Store at room temperature, keep dry and cool {} {} {} {} {} {} {} {} {} {} {} {LY} Store at room temperature, keep dry and cool {} {} {} {} {} {} {} {} {} {} {} {} {LY} Store at room temperature, keep dry and cool {} {} {} {} {} {} {} {} {} {} {} {} {} {LY} Store |
Packing Group | III |
Hazard Class | 3 |
Restrict | 危险品 |
*以上化合物性质及应用等信息仅供参考